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Category: IGBTtransistorDescription: IGBT The Infineon * * Infineon * * series IGBT modules provide low switching losses for switching frequencies up to 60 kHz. IGBT spans a series of power modules, such as ECONOPACK package, with open collector emitter voltage at 1200V; PrimePACK IGBT half bridge chopper module with NTC up to 1600/1700V. PrimePACK IGBT can be found in industrial, commercial, construction, and agricultural vehicles. The N-channel TRENCHSTOP TM and Fieldstop IGBT modules are suitable for both hard switching and soft switching applications, such as inverters, UPS, and industrial drives. Package types include: 62mm module, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4 # # # IGBT discrete parts and modules, Infineon insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.39931+$646.453010+$623.770450+$620.9351100+$618.0998150+$613.5632250+$609.5938500+$605.62441000+$601.0878 -
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Category: IGBTtransistorDescription: IGBT Module, Vishay's high-efficiency IGBT module comes with PT, NPT, and Trench IGBT technology options. This series includes single switch, inverter, chopper, half bridge or with custom configuration. These IGBT modules are designed to serve as primary switching devices in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drive, and power factor correction systems. Typical applications include: boost and buck converters, forward and double forward converters, half bridge, full bridge (H-bridge), and three-phase bridge. A wide range of industrial standard packaging types are available for direct installation on heat sinks, including PT, NPT, and Trench IGBT technologies. The low VCE (on) IGBT switching frequency ranges from 1 kHz to 150 kHz, with robust instantaneous performance and high isolation voltage up to 3500 V, 100% lead-free (Pb), and RoHS compliant low thermal resistance. The IGBT module, Vishay insulated gate level bipolar transistor or IGBT, is a three terminal power semiconductor device known for its efficient and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.98171+$2886.948910+$2860.703925+$2847.581450+$2834.4589100+$2821.3364150+$2808.2139250+$2795.0914500+$2781.9689
